SiPM measurements
One goal of the activities of WP2 were common characteristic measurements on recent SiPMs. These measurements were performed in the context of the cooperation agreement. You can find more information about the agreement and the participating institutes here.
In the following table you find some of the measurements for different Test Facilities and different SiPMs. For different devices you can find different measurements, some of the characteristics were measured by different labs and some only by a single one. The name of the lab where the measurements took place are indicated next to the measured value with the following abbreviations:
Unige -> Measurements from the Idea² at University of Geneva
Nagoya -> Measurements from the Nagoya University
Catania -> Measurements from the INAF’s Catania astrophysical Observatory Laboratory for Detectors
KIT -> Measurements from SPOCK at Karlsruhe Institute of Technology
The measurements are partly published in these papers:
- SENSE: A comparison of photon detection efficiency and optical crosstalk of various SiPM devices, A. Nagai et al., NIM A, Volume 912, 21 December 2018, Pages 182-185, https://doi.org/10.1016/j.nima.2017.11.018
- Characterisation of a large area silicon photomultiplier , A. Nagai et al., arXiv:1810.02275
- The SENSE project: Developments, characteristics and application of low light-level photo sensors, T. Huber et al., PoS(ICRC2019)291, pre-published
A short description of SiPM charactistics:
Quantum Efficiency : QE(l) - ratio of generated photoelectrons to impinging photon flux
Photoelectron Collection Efficiency : ph.e.CE(l) - fraction of generated photoelectrons
Photon Detection Efficiency : PDE(l) = QE(l) x ph.e.CE(l)
Afterpulses : delayed pulses generated by non-photo-generated carriers
Cross-Talk : photon emission propagating to and triggering neighboring cells
Pulse Shape : rise time of the avalanche formation and the variation in the transit times of signals arriving from different points on the sensor’s active area + recovery time of the sensor determined by the microcell recharge time constant
Fill Factor : percentage of the SiPM sensor surface area that is sensitive to light
Dark Count Rate : (DCR) Noise primarily produced by thermal electrons in the active volume